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N605-10002-00 Datasheet

Symbol Parameter Test Conditions Min Typ. Max Unit
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 ccA 1 1.7 2.5 V
RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 3.5 A VGS = 5 V ID = 3.5 A O3 0.35 0.4 0.45 l l
ID(on) On State Drain Current VDS > ID(on) X RDS(on)max VGS = 10 V 7 A


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NOTES(WRITE CYCLE) 1. All write cycle timing is referenced from the last valid address to the first transition address. 2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ; A write ends at the earliest transition CS going high or WE going high. tWP iS measured from the beginning of write to the end of write. 3. tcw is measured from the later of CS going low to end of write. 4. Vxs is measured from the address valid to the beginning of write. 5. tWR iS measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high. 6. If OE, CS and WE are in the Read Mode during this period, the l/0 pins are in the output low-Z state. Inputs of opposite phase of the output must not be applied because bus contention can occur. 7. For common l/0 applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. 8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state. 9. Dout is the read data of the new address. 10.When CS is low : l/0 pins are in the output state. The input signals in the opposite phase leading to the output should not be applied.