| SYMBOL | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| V(BR)DSS VGS(TO) RDScON) IGSS IDSS | Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Gate-source leakage current Zero gate voltage drain current | VGS = 0 V; ID = 0.25 mA; Tj = -55aC VDS = VGS; ID = 1 mA Tj = 175aC Tj = -55aC VGS = 10 V; ID = 25 A VGS = 5 V; ID = 25 A VGS = 4.5 V; ID = 25 A VGS = 5 V; ID = 25 A; Tj = 1750C VGS = +10 V; VDS = 0 V; VDS = 55 V; VGS = 0 V; Tj = 175aC | 55 42 1 0.5 | 1.5 3.2 3.6 3.8 6.2 0.02 0.05 | 2 2.3 4.2 4.5 5 9.5 100 10 500 | V V V V V nA cCA cCA |
| Qg(tot) Qgs Qgd | Total gate charge Gate-source charge Gate-drain (Miller) charge | ID= 100 A; VDD= 44 V; VGS = 5 V | | 226 36 1 06 | | nC nC nC |
| td on tr td off tf | Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time | VDD = 30 V; RD = 1.2 I VGS = 10 V; RG = 5.6 I Resistive load | | 26 118 848 336 | | ns ns ns ns |
| Ld Ld Ls | Internal drain inductance Internal drain inductance Internal source inductance | Measured tab to centre of die Measured from drain lead to centre of die Measured from source lead to source bond pad | | 3.5 4.5 7.5 | | nH nH nH |
| Ciss Coss Crss | Input capacitance Output capacitance Feedback capacitance | VGS = 0 V; VDS = 25 V; f= 1 MHz | | 1 3 1 900 1250 | | nF pF pF |
| | | | | | |