N22664 Datasheet DESCRIPTION The SD1534-01 is a gold metallized silicon, NPN powertransistordesigned for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1534-01 is pack- aged in the .280" input matched stripline package resulting in improved broadband performance and a low thermal resistance. N22664 Price| Symbol | Value | Unit | Symbol | Value | Unit | | typ. | typ. | | Thermal resistance | Thermal capacitance | | Rthl | 0.00812 | K/W | Cthl | 0.0003562 | Ws/K | | Rth2 | 0.016 | Cth2 | 0.001337 | | Rth3 | 0.031 | Cth3 | 0.001831 | | Rth4 | 0.114 | Cth4 | 0.005033 | | Rth5 | 0.135 | Cth5 | 0.012 | | Rth6 | 0.059 | Cth6 | 0.092 | | | | | | |
N22664 on stock| SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT | | VR continuous reverse voltage 175 V | | IF continuous forward current 100 mA | | P tot total power dissipation T s =900C 715 mW | | T stg storage temperature -65 +150 aC | | Ti junction temperature -65 +150 aC |
| Collector-emitter breakdown voltage /C = 1 mA, /B = 0 | V(BR)CEO | 1 2 | | | V | | Collector-emitter cutoff current VCE = 20 V, VBE = 0 | /CES | | | 1 00 | UA | | Collector-base cutoff current VCB = 10 V, /E = 0 | /CBO | | | 1 00 | nA | | Emitter-base cutoff current VEB = 1 V, /C = 0 | /EBO | | | 1 | UA | | DC current gain /C = 50 mA, VCE = 8 V | hFE | 50 | 1 00 | 200 | | | | | | | |
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