| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| N2012Z202T01 | TOKIN | Original i | SMD | 09+ |
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| N2012Z202T01 | 06+ | 3000 |
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N2012Z202T01 Datasheet Infineon Technologies Components may only be used in life-support devices or systems with the express written approval ofInfineon Technologies, if a failure of such components can reasonably be expected to cause the failure ofthat life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. Ifthey fail, it is reasonable to assume that the health of the user or other persons may be endangered. N2012Z202T01 Price DESCRIPTION The PD55008 is a common source N-Channel, en- hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies of up t0 1GHz. PD55008 boasts the excellent gain, linearity and reliability of ST's latest LDMOS tech- nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008's su- perior linearity performance makes it an ideal so- lution for car mobile radio. N2012Z202T01 on stock LT1021-7 The 7V version of the LT1 021 has no trim pin becausethe internal architecture does not have a point which could be driven conveniently from the output. Trimming must therefore be done externally, as is the case with ordinary reference diodes. Unlike these diodes, however, the out- put of theLT1 021 can beloaded with atrim potentiometer. The following trim techniques are suggested; one for voltage output and one for current output. The voltage output is trimmed for 6.95V. Current output is lmA, as shown, into a summing junction, but all resistors may be scaled for currents up t0 10mA
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