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MZHS2005410A Datasheet

Parameter	Symbol	Condition	Min	Typ	Max	Unit	Notes
Output rise time	trh	Measure in linear region : 1.2V ~ 1.8V	1 37		4.37	Volts/ns	3
Output fall time	tfh	Measure in linear region : 1.2V ~ 1.8V	1 30		3.8	Volts/ns	3
Output rise time	trh	Measure in linear region : 1.2V ~ 1.8V	2.8	3.9	5.6	Volts/ns	1 2
Output fall time	tth	Measure in linear region : 1.2V ~ 1.8V	2.0	2.9	5.0	Volts/ns	1 2

MZHS2005410A Price

			Limits
Symbol	Parameter	Test conditions	Min	Typ	Max	U nit
ICEX	Collector cutofl current	VCE=1 200V, VEEk2V			4 0	mA
ICBO	Collector cutofl current	Vck1200V,Emitter open			4 0	mA
IEBO	Emitter cutofl current	VEB=7V, Collector open			200	mA
VCE (sal)	Collector-emitter satu ration voltage	lc-300A, IB=400mA			4 0	v v
VBE (sal)	Base-emitter saturation voltage	lc-300A, IB=400mA			4 0
-VCEO	Collector-emitter reverse voltage	lc--300A (diode torward voltage)			1 8	v
hFE	DC current gain	lc-300A, VcE=4 0V	750
ton					2 5	US
ts	Switching time	Vcc-600V, lc-300A, IBl=600mA, -IB2=6 0A			15	Lis
tf	Switching time	Vcc-600V, lc-300A, IBl=600mA, -IB2=6 0A			3 0	Lis
Flh a-c)0	Thermal resistance	Transistor parl			0 063	o c/w
Flh O-c)R	Ounction to case)	Diode parl			0 3	o c/w
Flh (c-0	Contact thermal resistance (case to fin)	Conductive grease applied			0 04	o c/w

Features 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg			Pinouts 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW
Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose Rate Upset >1010 RAD (Si)/s, 20ns Pulse Latch-Up Free Under Any Conditions Military Temperature Range: -55aC to +1250C Significant Power Reduction Compared to LSTTL ICs DC Operating Voltage Range: 4.5V t0 5.5V			E11 A01 A11 Y01 Y11 Y21 Y31 GND	V		vcc 2 E ~2AO 2 A1 ~2YO 2 Y1 ~2Y2 92Y3
Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min Input Current Levels li " 5ccA at VOL, VOH Description The Intersil HCS139MS is a Radiation Hardened 2-to-4 line Decoder/Demultiplexer with an active low enable (E). Data			16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C TOP VIEW d . N - 1 . urr
on the select inputs (AO, A1) cause one of the four normally high outputs to go to a low logic level. The Demultiplexing function is performed by using the enable input as the data input. If the enable input is high all four outputs remain high. For demultiplexer operation the enable input is the data input. The enable input also functions as a chip select when these devices are cascaded.			CI A01 A11 Y01 Y11 Y21 Y31 GND	I ~ I 2 15 3 14 4 13 5 12 6 11 7 10 8 9		v \-u 2E 2AO 2 A1 2 YO 2 Y1 2 Y2 2 Y3
The HCS139MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS139MS is supplied in a 16 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).
Ordering Information
	PART NUMBER	TEMPERATURE RANGE	SCREENING LEVEL		PACKAGE
	HCS139DMSR	-550c to +1250C	Intersil Class S Equivalent		16 Lead SBDIP
	HCS139KMSR	-550c to +1250C	Intersil Class S Equivalent		16 Lead Ceramic Flatpack
	HCS139D/Sample	+250C	Sample		16 Lead SBDIP
	HCS139K/Sample	+250C	Sample		16 Lead Ceramic Flatpack
	HCS139HMSR	+250C	Die		Die