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MY200X Datasheet

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Write 60h 0
Write Block Address
Write DOh


MY200X Price

Average Forward Current IF(AV) 1.5A TA=700C
Peak Forward Surge Current IFSM 50A 8.3ms, half sine
Maximum Instantaneous Forward Voltage VF 1.4V IFM = 1.5A; TJ = 250C'
Maximum DC Reverse Current At Rated DC Blocking Voltage IR 5.OuA 300UA TA = 250C TA = 1000C
Typical Junction Capacitance cJ 15pF Measured at 1.OMHz, VR=4.OV


MY200X on stock
Notes : 1 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead lenqth P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm) copper Pads. UPDATE : AUGUST 26,1998
BYTE/WORD PROGRAMMING: Once a memory block is erased, it is programmed (to a logi- cal "0") on a byte-by-byte or on a word-by-word basis. Programming is accomplished via the internal device command register and is a four-bus cycle operation. The device will automati- cally generate the required internal program pulses.