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MXSMCJLCE75TR Datasheet
Once set, WEL remains set until either it is reset t0 0 (by writing a "0" to the WEL bit and zeroes to the other bits of the control register) or until the part powers up again. Writes to the WEL bit do not cause a high volt- age write cycle, so the device is ready for the next operation immediately after the stop condition.
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Symbol Parameter Ratings Unit
VDl,VD2,VD3 Supply voltage of HPA 5 V
VD NVG Supply voltage of NVG 5 v
VD_LEV,VT,VGC Control voltage 4.5 v
Pin Input power 5 dBm
Tc(op) Operating case temperature -30+85 degC
Tstg Storage temperature -30+100 degC


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FLASH read only cacheable, scratch-pad memory or non-cacheable OxOOOOOO~OxlFFFFF
reserved Ox200000~Ox3FFFFF
SRAM read only cacheable, scratch-pad memory or non-cacheable Ox400000~Ox5FFFFF
100 read only cacheable, scratch-pad memory or non-cacheable Ox600000~Ox7FFFFF
101 read only cacheable, scratch-pad memory or non-cacheable Ox800000~Ox9FFFFF
* This address space is based on byte addressing. There are addition extended two bits in the most significant bits(25th and 24th), and they are used for the indication of section attribute. All instructions are checked whether they are cached in the scratch-pad memory first. Then, those two bits are used to check the source ofthat instruction fetch. "OO" indicates those section can be loaded only through on-chip instruction cache with conventional two-way set associate policy. "01" indicates those section can be loaded only seto region of on-chip instruction cache. "10" indicates those section can be loaded only setl region of on-chip instruction cache. "11" indicates those section can be loaded directly from external memory without passing instruction cache. The address space of this internal scratch-pad memory is OxAOOOOO~OxAOBFFF for XMEM and OxCOOOOO~OxCOBFFF for YMEM. The scratch memory is divided into four pages each size ofwhich is 32KB with 9-bit instruction tag which consists of 3-bit section attribute and the most significant 6-bit section address. On-chip RISC processor will check the match by full associative comparison with four tag registers ofinternal scratch-pad memory first. Then, ifthat tag comparison is matched, instruction will be fetched from internal scratch-pad memory. Otherwise, instruction will be fetch through on-chip instruction cache from external flash memory region.


N Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.