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MXSMCGLCE45TR Datasheet

NUMBER SYMBOL MARK
+1 TYPE SHOR3D42 HOR3D
*2 Lot Number o Example 8A : January 1998 8B : February 1998 8L : December 1998


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Parameter Min Typ Max Units Conditions
Is Continuous Source Current (Body Diode) 31 A MOSFET symbol ID showing the
ISM Pulsed Source Current (Body Diode) Oi 124 integral reverse G p-n junction diode. Is
VSD Diode Forward Voltage 1 3 V TJ = 250C, Is = 18A, VGS = OV
trr Reverse Recovery Time 200 300 ns TJ = 250C, IF = 18A
Qrr Reverse RecoveryCharge 1 7 2 6 UC di/dt = 100Nps
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)


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When the RF input (PIN) is off, the gate voltage (VGG2) is set t0 0.4 V The formula*i where VGG2=f (IDD: VGG2=0.4 V) The output power (POUT)
and IDD iS read. is used to set VGG2. is adjusted t0 21.0 dBm.


NOTES: 1. See Test Loads and Waveforms for test load and termination. 2. Skew specifications apply under identical environments (loading, temperature, VDD, device speed grade). 3. Measured in open loop mode PLL_EN = 0. 4. Jitter is characterized with Q output at 20MHz. See Frequency Selection Table for information on proper FREQ_SEL level for specified input frequencies 5. tPD measured at device inputs at 0.5VDD, Q output at 80MHz.