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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
MXS87370 MOLEX  new  new  现货订货,只做全新原装货  168 
    North Technology Co.,Ltd
  • Contact:JOJO
  • Tel:86-10-82637263
  • Fax:86-10-82639385
  • Email: jojo@northelec.com

MXS87370 Datasheet

I I I
1__- I I
PULSE TEST
Te=- }IU-C
l l I Tc 2+WC
VGS-GATE-SOURCE VOLTACiE-(Wtl)


MXS87370 Price
When the EPCI is initialized into the synchronous mode, the receiver first enters the hunt mode on a o t0 1 transition of RxEN (CR2). In this mode, as data are shifted into the receiver shift register a bit at a time, the contents of the register are compared to the contents of the SYNl register. If the two are not equal, the next bit is shifted in and the comparison is repeated. When the two registers match, the hunt mode is terminated and character assembly mode begins. If single SYN operation is programmed, the SYN DETECT status bit is set. If double SYN operation is programmed, the first character assembled after SYNl must be SYN2 in order for the SYN DETECT bit to be set. Otherwise, the EPCI returns to the hunt mode. (Note that the sequence SYNl-SYNl-SYN2 will not achieve synchronization.) When synchronization has been achieved, the EPCI continues to assemble characters and transfer then to the holding register, setting the RxRDY status bit and asserting the RxRDY output each time a character is transferred. The PE and OE status bits are set as appropriate. Further receipt of the appropriate SYN sequence sets the SYN DETECT status bit. If the SYN stripping mode is commanded, SYN characters are not transferred to the holding register. Note that the SYN characters used to establish initial synchronization are not transferred to the holding register in any case.
MXS87370 on stock

Symbol Parameter Test Conditions Min Typ. Max Unit
V(BR)DSS Drain-source Breakdown Voltage ID = 25 mA, VGS = 0 24 V
IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = 20V VDS = 20V, Tc = 125 aC 1 10 pA pA
IGSS Gate-body Leakage Current (VDS = 0) VGS=±20V +100 nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250pA 1 V
RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 30 A VGS = 5 V, ID = 30 A 0.0062 0.008 0.008 0.014 l l


Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, lB = 0) ICEO 500 nAdc
Emitter-Base Cutoff Current MUN5211DWIT1 (VEB = 6.0 V, lc = 0) MUN5212DWIT1 MUN5213DWIT1 MUN5214DWIT1 MUN5215DWIT1 MUN5216DWIT1 MUN5230DWIT1 MUN5231DWIT1 MUN5232DWIT1 MUN5233DWIT1 MUN5234DWIT1 MUN5235DWIT1 MUN5236DWIT1 MUN5237DWIT1 IEBO 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0 .18 0 .13 0.2 0.05 0 .13 mAdc
Collector-Base Breakdown Voltage (lc = 10 IE = 0) V(BR)CBO 50 Vdc
Collector-Emitter Breakdown Voltage (Note 3.) (lc = 2.0 mA, lB = 0) V(BR)CEO 50 Vdc