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MXP6501 Datasheet

		Values
Parameter	Symbol	rmn	typ	max	Unit	Test Conditons
Voltage gain	Gv		10		dB	-OvVi =1 V
Max. output voltage	VqAF3 rms			300	rrN	THD - 100k
Min. load resistance	Rr:13	5			kQ
Total harmonic distortion	THD		2		%
Volume control range	GVoi		80		dB
Muting depth	M	3 20	6 26	10 40	dB dB	V4 = O V/l V Rmute = oa Rmute = 0
Disturbance voltage in acc. with DIN 45 4052)			30		riVos	= 1/2 Vstab

MXP6501 Price

Symbol	Parameter	Test Conditions	Value					Unit
			TA=25 0C			·40 t0 85 0C
			Min	Typ.	Max	Min	Max
CIN	Input Capacitance			4	10		10	pF
COUT	Output Capacitance			5				pF
CPD	Power Dissipation Capacitance (note l)			9				pF

MXP6501 on stock

Parameters	Test Conditions/Pins	Symbol	Min	Typ.	Max	Unit
Current Consumption
Quiescent current (Vs)	Vvs < 16 V, INH or bit Sl = low Pins 5, 10	IVs			40	UA
Quiescent current (Vcc)	4.5 V < Vvcc < 5.5 V, INH or bit Sl = low, Pin 19	IVcc			20	UA
Supply current (Vs) normal operating	Vvs < 16 V, Pins 5, 10 all output stages off	IVs		0.8	1.2	mA
Supply current (Vs) normal operating	all output stages on, no load	IVs			10	mA
Supply current (Vcc)	4.5 V < Vvcc < 5.5 V, normal operating, Pin 19	IVcc			150	UA
Internal Oscillator Frequency
Frequency (time-base for delay timers)		fosc	19		45	kHz
Over- and Undervoltage Detection, Power-on Reset
Power-on reset threshold	Pin 19	VVcc	3.4	3.9	4.4	V
Power-on reset delay time	After switching on Vycc	tdPor	30	95	160	}~IS
Undervoltage detection threshold	Pins 5.10	VUv	5.5		7.0	V
Undervoltage detection hysteresis	Pins 5.10	AVuv		0.4		V
Undervoltage detection delay		tdUV	7		21	ms
Overvoltage detection threshold	Pins 5.10	Vov	18		22.5	V
Overvoltage detection hysteresis	Pins 5.10	AVov		1		V
Overvoltage detection delay	Input register, Bit 14 (SCT) = high	tdOV	7		21	ms
Overvoltage detection delay	Input register, Bit 14 (SCT) = low	tdOV	1.75		5.25	ms
Thermal Prewarning and Shutdown
Thermal prewarning, set		TjPWset	125	145	165	aC
Thermal prewarning, reset		TjPWreset	105	125	145	aC
Thermal prewarning hysteresis		ATjPW		20		K
Thermal shutdown, off		Tj switcn off	150	170	190	aC
Thermal shutdown, on		Tj switcri on	130	150	170	aC
Thermal shutdown hysteresis		ATj switcr, oft		20		K

Description: Mitsubishi IGBT Modules are de- signed for use in switching applica- tions. Each module consists of six IGBTs in a three phase bridge con- figuration, with each transistor having a reverse-connected super- fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, oering simplified sys- tem assembly and thermal man- agement.

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