| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| MXO45-2C-40M0000 | CTS-Frequenc | SMD | 09+ | new and original | 3000 |
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| MXO45-2C-40M0000 | CTS | 09+ | 46000 |
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| MXO45-2C-40M0000 | CTS | 07+ | 14000 |
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| MXO45-2C-40M0000 | CTS | 2009 | 14000 |
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MXO45-2C-40M0000 Datasheet s Quasi-Resonant Operation for Low EMI and High Efficiency s Output Power t0 220 W s Low-Power Output Standby Mode s Pulse-by-Pulse Over-Current Protection s Latched Over-Voltage and Thermal Protection s Third-Generation Switching Transistor with Proportional Drive s Maximum ON Time and Off Time Set During Manufacture s Internal Under-Voltage Lockout with Hysteresis s Over-Molded SIP with Integral Isolated Heat Spreader MXO45-2C-40M0000 on stock The exposed-pad (EP) SO package can be soldered to the PC board for enhanced thermal performance. If the EP is not soldered to the PC board, the thermal resis- tance is the same as the regular SO package. The EP is connected to the chip VEE supply. Be sure that the pad does not touch signal lines or other supplies. General Description The K4H560838F / K4H561638F is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 8,388,608 /4x 4,194,304 words by 8 / 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up t0 400Mb/s per pin. 1/0 transactions are possible on both edges of DQS. Range of operating frequen- cies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications. Absolute Maximum Ratings |
