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suppliers of MXF3535T14R3T502 and PDF data of MXF3535T14R3T502

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
MXF3535T14R3T502         187 


MXF3535T14R3T502         187 
    S&L Technology Development co..
  • Contact:Jennifer Zeng
  • Tel:86-755-83511882
  • Fax:86-755-83511886
  • Email: jennifer@xkzd.net


MXF3535T14R3T502     09+    187 
    Nuoxinyuan Electronics Co.,Ltd
  • Contact:Regina
  • Tel:86-755-83957733
  • Fax:86-755-83956848
  • Email: regina@nxy-ic.com
MXF3535T14R3T502         1580 


MXF3535T14R3T502     08+    187 
    Hongtu Trading Limited
  • Contact:yan
  • Tel:86-755-82500330
  • Fax:
  • Email: hongtutl@163.com
MXF3535T14R3T502         6000 
    Dosen Electronics (HK) Limited
  • Contact:Andy
  • Tel:86-75583996660
  • Fax:86-75583996676
  • Email: andy@dosenelec.com
MXF3535T14R3T502         187 
    ShenzhenYingfanElectronic
  • Contact:Ms.Mszhanzhan
  • Tel:86-0755-83202365
  • Fax:86-0755-83202365
  • Email: sz-na@163.com
MXF3535T14R3T502 N/A        187 
MXF3535T14R3T502         287 
    ExcellentElectronics(hk)Co.,Lt..
  • Contact:Ms.AnneHuang
  • Tel:86-755-82727096/61685817
  • Fax:86-755-82731987
  • Email: anne@hkexcellent.com

MXF3535T14R3T502 Datasheet

I/Q offS j
EV M --
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MXF3535T14R3T502 Price

2A
1A
X <.500mA
) L
100r iA o j --- -


MXF3535T14R3T502 on stock

VDSS Drain - Source Voltage 500 V
ID Continuous Drain Current 50 A
IDM Pulsed Drain Current i 200 A
VGS Gate - Source Voltage +20 V
VGSM Gate - Source Voltage Transient +30
Total Power Dissipation @ Tcase = 250C 500 W
PD Derate Linearly 4 W/oC
TjTSTG Operating and Storage Junction Temperature Range -55 t0 150 oC
TL Lead Temperature : 0.063" from Case for 10 Sec. 300
IAR Avalanche Currenti (Repetitive and Non-Repetitive) 30 A
EAR Repetitive Avalanche Energy i 30 mJ
EAS Single Pulse Avalanche Energy 2 1 300


Symbol Test Conditions Value Unit
VTM (2) ITM = 5.5 A tp = 380 ps = 250C MAX 1.6 V
Vto (2) Threshold voltage Tj= 1250C MAX 0.9 V
Rd (2) Dynamic resistance Tj= 1250C MAX 120 m
IDRM VDRM= VRRM Tj= 250C 5 UA
IRRM Tj= 1250C MAX 1 mA