ADMap-26  > MI-P7Y-MYV

suppliers of MI-P7Y-MYV and PDF data of MI-P7Y-MYV

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  

MI-P7Y-MYV Datasheet

VCE =1 V f=4 GHz
MAG
IS21el2 V


MI-P7Y-MYV Price

Limits
Symbol Parameter Test conditions Min Typ Max Unit
V (BR) DSS Drain-source breakdown voltage ID = ImA, VGs = OV 700 v
V (BR) GSS Gate-source breakdown voltage IGS = +100ffA, VDS = OV ±30 v
IGSS Gate-source leakage current VGS = +25V, VDS = OV ±10
IDSS Drain-source leakage current VDS = 700V, VGS = OV 1 mA
VGS (th) Gate-source threshold voltage ID = 1ffiA, VDS = 10V 2 3 4 v
rDS (ON) Drain-source on-state resistance ID = 3A, VGS = 10V 1 40 1 82
VDS (ON) Drain-source on-state voltage ID = 3A, VGS = 10V 4 20 5 46 v
yfs Forward transfer admittance ID = 3A, VDS = 10V 3 6 6.0 S
Ciss Input capacitance 1050 pF
Coss Output capacitance VDS=25V,VGS=Oy f=1MHz 100 pF
Crss Reverse transfer capacitance 24 pF
td (on) Turn-on delay time 20 ns
tr Rise time VDD = 200y ID = 3A, VGS = 10V, 22 ns
td (off) Turn-off delay time RGEN = RGS = sol 110 ns
tf Fall time 35 ns
VSD Source-drain voltage Is = 3A, VGS = OV 1.0 1 5 v
Rth (ch-c) rhermal resistance Channel to case 4 17 IC/W


MI-P7Y-MYV on stock
(2) Eco Plan - May not be currently available - please check . ': :' :.' for the latest availability information and additional product content details. None: Not yet available Lead (Pb-Free). Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br): TI defines "Green" to mean "Pb-Free" and in addition, uses package materials that do not contain halogens, including bromine (Br) or antimony (Sb) above 0.1% of total product weight.

aty. Order- Series Amp Code Packaging
Number 150