| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| MBM27C1001A15Z | FUJITSU | . | . | 49 |
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MBM27C1001A15Z Datasheet The Write Protection feature allows the user to protect against inadvertent programming of the non-volatile data registers. If the WP pin is tied to LOW, the data registers are protected and become read only. Similarly, the WP pin is going low after start will interrupt non- volatile write to data registers, while WP pin going low afteran internalwrite cycle has started will have no effect on any write operation. The CAT5259 will accept both slave addresses and instructions, but the data registers are protected from programming by the device's failure to send an acknowledge after data is received. MBM27C1001A15Z Price V - d I ' l u a u n j p r e } v u o { M - ( A V ) d d ' u o p E d l s s l a i a } v \ o d p i e } v u o { a 8 e i a A V V - ( ) I e a d ) V \ I S d I ' l u a u n j p r e r v u o d a k n S MBM27C1001A15Z on stock The HGTIS7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 250C and 1500C. |
