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MAX6423XS42-T Datasheet
The control register is accessed with a special pream- ble in the slave byte (1011) and is located at address 1FFh. It can only be modified by performing a byte write operation directly to the address of the register and only one data byte is allowed for each register write operation. Prior to writing to the control register, the WEL and RWEL bits must be set using a two step process, with the whole sequence requiring 3 steps. See "Writing to the Control Register".
MAX6423XS42-T Price

CONNECTION
PIN UVD-432XC UVD-482XC
l ANODE C (DIGIT l) CATHODE C (DIGIT l)
2 ANODE E (DIGIT l) CATHODE E (DIGIT l)
3 ANODE D (DIGIT l) CATHODE D (DIGIT l)
4 COMMON CATHODE (DIGIT l) COMMON ANODE (DIGIT l)
5 COMMON CATHODE (DIGIT 2) COMMON ANODE (DIGIT 2)
6 ANODE D (DIGIT 2) CATHODE D (DIGIT 2)
7 ANODE E (DIGIT 2) CATHODE E (DIGIT 2)
8 ANODE C (DIGIT 2) CATHODE C (DIGIT 2)
9 ANODE G (DIGIT 2) CATHODE G (DIGIT 2)
10 ANODE A (DIGIT 2) CATHODE A (DIGIT 2)
ll ANODE F 9 DIGIT 2) CATHODE F (DIGIT 2)
12 ANODE B (DIGIT 2) CATHODE B (DIGIT 2)
13 ANODE B (DIGIT l) CATHODE B (DIGIT l)
14 ANODE F (DIGIT l) CATHODE F (DIGIT l)
15 ANODE A (DIGIT l) CATHODE A (DIGIT l)
16 ANODE G (DIGIT l) CATHODE G (DIGIT l)


MAX6423XS42-T on stock

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 1 000 V
VDGR Drain- gate Voltage (RGS = 20 kl 1 000 V
VGS Gate-source Voltage ±30 V
lD Drain Current (continuous) at Te = 25 0C 1 5 A
lD Drain Current (continuous) at Te = 100 0C 9.5 A
IDM Drain Current (pulsed) 60 A
Ptot Total Dissipation at Te = 25 0C 300 W
Derating Factor 2.4 W/oC
Tstg Storage Temperature -55 t0 150 oC
Ti Max. Operating Junction Temperature 1 50 oC
Vls0 Insulation Withhstand Voltage (AC-RMS) 2500 V


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