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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
MAX16023LTAS18 MAXIM  TDFN  0831+    1000 
    A-RICH HK LECTRON CO.,LIMITED
  • Contact:JING ZHOU
  • Tel:86-755-33377586
  • Fax:86-755-33377578
  • Email: ARICH2@yahoo.cn


MAX16023LTAS18 MAX  TDFN-8  2008+    10000 

MAX16023LTAS18 Datasheet
A fraction of the oscillator ramp can be resistively summed with the current sense signal to provide slope compensation for converters requiring duty cycle over 50%. Note that capacitor C, forms a filter with R2 to suppress the leading edge switch spikes.
MAX16023LTAS18 Price
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley
MAX16023LTAS18 on stock
Features . NPN Silicon Microwave Power Transistor , Common Base Configuration . Broadband Class C Operation . High Efficiencylnterdigitated Geometry . Diffused Emitter Ballasting Resistors ( , Gold Metalization System . Internallnput and Output Impedance Matching . Hermetic Metal/Ceramic Package

Parameters Min Typ Max Units Test Conditions
VBR, Vr Breakdown Voltage, Blocking Voltage 200 V IR= 100pA
VF Forward Voltage 0 975 V IF= 8A
0 895 v IF = 8A, TJ = 1500C
IR Reverse Leakage Current 5 pA VR= VR Rated
250 pA TJ = 1500C, VR = VR Rated
CT Junction Capacitance 25 pF VR= 200V
Ls Serieslnductance 8 0 nH Measuredlead to lead 5mm from package body


Continuous operafion, 5V input fypes 4.5 5 5 5
Voltage Range 10.8 1 2 13.2 V Continuous operation, 1 2V input types
41 47 mAfp-pted Ripple Current
Conditions MIN TYP MAX Unitseter
Rated Power2