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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
M514260BSL70			.		.	OneNew electroincs co.,ltd Contact:Bell Tel:077583014681 Fax: Email: onenew02@hkonew.com
M514260BSL70	1000		MITSUBISHI			Coten Electronic (HK) Limited Contact:CarolChan Tel:86-755-83740377 Fax:86-755-8252-1899 Email: cotenelec@gmail.com
M514260BSL70					3371	BrioceanTradingco.,ltd Contact:Ms.sharonho Tel:86-0755-82865505 Fax:86-0755-82861282 Email: sharonho@briocean.com

M514260BSL70 Datasheet

Single Phase Ha 60Hz Indutive or Resistive Load

f Wave

M514260BSL70 Price

However, for a given ROL, the amount of current available will be directly proportional to the advantage voltage 1.5VIN - VOUT. This voltage can typically be quite small. Consider the example of driving white LEDs from a 3.1V supply. If the LED forward voltage is 3.8V and the 0.6V VFB setting is used, the advantage voltage is 3.1V , 1.5V - 3.8V - 0.6V or only 250mV. However if the input voltage is raised t0 3.2V the advantage voltage jumps to 400mV-a 60% improvement in available strength! Note that a similar improvement in advantage voltage can be achieved by operating the LTC3202 at a lower voltage setting such as the 0.4V setting.
M514260BSL70 on stock

CHARACTERISTIC	SYMBOL	TEST CONDITION	MIN	TYP	MAX	UNIT
Collector Cut-off Current	ICBO	VCB = 150 V, IE = O			1.0	pA
Emitter Cut-off Current	IEBO	VEB = 6 V, IC = 0			1.0	pA
Collector-Emitter Breakdown Voltage	V (BR) CEO	IC = 10 mA, IB = 0	160			V
DC Current Gain	hFE (Note)	VCE = 5 V, IC = 200 mA	60		320
Collector-Emitter Saturation Voltage	VCE (sat)	IC = 500 mA, IB = 50 mA			1.5	V
Base-Emitter Voltage	VBE	VCE = 5 V, IC = 5 mA	0.45		0.75	V
Transition Frequency	fT	VCE = 5 V, IC = 200 mA	20	100		MHz
Collector Output Capacitance	Cob	VCB = 10 V, IE = 0, f = 1MHz			20	pF

Description The pA9665, r1A9666, pA9667, and pA9668 are comprised of seven high voltage, high current NPN Darlington transis- tor pairs. All units feature common emitter, open collector outputs. To maximize their effectiveness, these units con- tain suppression diodes for inductive loads and appropriate emitter base resistors for leakage.

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