Stored in each chip's ROM is the ability to generate a selection of different multiples of the input reference frequency, including an exact 155.52 MHz clock from common crystals. For lowest jitter and phase noise on a 155.52 MHz clock, a 19.44 MHz crystal and the x8 selection can be used.
| SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
| ICBO | collector cut-off current | IE = 0; VCB = 30 V | | 100 | nA |
| IE = 0; VCB = 30 V; Ti = 150 IC , J | | 10 | o |
| IEBO | emitter cut-off current | lc = 0; VEB = 5V | | 100 | nA |
| hFE | DC current gain | VCE = 2 V; see Fig.2 lc = 5 mA lc = 150 mA lc = 500 mA | 40 63 25 | 250 | |
| DC current gain BC639-10 BC635-16; BC637-16; BC639-16 | lc = 150 mA; VCE = 2 V; see Fig.2 | 63 100 | 160 250 | |
| VCEsat | collector-emitter saturation voltage | lc = 500 mA; lB = 50 mA | | 500 | mV |
| VBE | base-emitter voltage | lc = 500 mA; VCE = 2 V | | 1 | V |
| fT | transition frequency | lc = 50 rriA; VCE = 5 V; f = 100 MHz | 100 | | MHz |
| hFE1 hFE2 | DC current gain ratio of the complementary pairs | licl = 150 mA; lvCEI = 2 V | | 1.6 | |
| | | | | |
| Parameter | Value | Unit |
| | Between Anode and Cathode | 1500 | Vdc |
| Supply Voltage | Between Anode and Last Dynode | 250 | Vdc |
| Average Anode Current | 0.3 | mA |
| Ambient Temperature | -30 to +50 | ][C |
| | | |
