ADMap-693  > IS61LV5128-15KLI

suppliers of IS61LV5128-15KLI and PDF data of IS61LV5128-15KLI

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
IS61LV5128-15KLI ISSI    2005+  SOJ36  4000 
IS61LV5128-15KLI ISSI    2008+  特价现货!专营内存  3029 
    HK FENGLIDA ELECTRONICS LTD
  • Contact:ZHAO
  • Tel:86-755-83235791
  • Fax:
  • Email: jh13k@yahoo.com.cn
IS61LV5128-15KLI AD  N/A  04+  sales@bmc-ic.com  50 
IS61LV5128-15KLI ISSI  SOJ36  2005+    4000 
IS61LV5128-15KLI ISSI  SOJ36  2005+    4000 
    dfvdfv
  • Contact:Luo
  • Tel:86-755-81943020
  • Fax:86-755-8288-4115
  • Email:

IS61LV5128-15KLI Datasheet
Evaluation Board Layout Board Size 2.0" x 2.0" Board Thickness 0.028", Board Material FR-4, Multi-Layer Ground Plane at 0.014"
IS61LV5128-15KLI Price

Symbol Parameter CondItIons RatIng Unlt
Vcc Supply Voltage Relative to GND - 0.6 to +7O V
Vlo Voltage Applied to All Pins Except A9.VPP Relative to GND -0.6 to Vcc+0.6 V
V102 Voltage Applied to A9 and VPP Relative to GND -0.6 to +13.5 V
Ambient Temp., Power Applied -65 to +150 'C
TST Storage Temperature -65 10 +150 'C
TLT Lead Temperature Soldering 10 seconds +300 'c


Drain- source breakdown voltage VGS = 0 V, /D = 0.25 mA, Tj = 25 aC V(BR)DSS 400 V
Gate threshold voltage VGS= VDS, /D = 1 mA VGS(th) 2.1 3 4
Zero gate voltage drain current VDS = 400 V, VGS = 0 V, Tj = 25 aC VDS = 400 V, VGS = 0 V, Tj = 125 aC /DSS 0.1 1 0 1 1 00 UA
Gate-source leakage current VGS = 20 V, VDS = OV /GSS 1 0 1 00 nA
Drain-Source on-resistance VGS = 10 V, /D = 6.5 A RDS(on) 0.35 0.5 1


Electrostatic damage (ESD) has been well recognized for MOSFET devices, but any semiconductor device deserves protection from this potentially damaging source. The VCA610 incorporates on-chip ESD protection diodes as shown in Figure 4. This eliminates the need for the user to add external protection diodes, which can add capacitance and degrade AC performance.