GRM39COG200J50PT Datasheet| SYMBOL | PARAMETER | MIN | TYP.5) | MAX | UNIT | | tWRl | Write Cycle Time | | 5 | 10 | ms | | | | | | |
GRM39COG200J50PT Price| Parameter | Test condition | Symbol | Value | Unit | | Reverse voltages | | VR | 5O | V | | Forward current | | IF | 25 | mA | | Peak forward current | t = 1.0 ms, duty cycle 50 % | IFM | 50 | mA | | Maximum surge forward current | t i l.0 Us, 300 pulses/s | IFSM | 1O | A | | Thermal resistance | | Rth | 700 | K/W | | Power dissipation | Tamb= 70 0C | Pdiss | 45 | mW | | | | | |
GRM39COG200J50PT on stock| Symbol | Parameter | Value | Unit | | VDS | Drain-source Voltage (VGS = 0) | 1 00 | V | | VDGR | Drain-gate Voltage (RGS = 20 kl ) | 1 00 | V | | VGS | Gate- source Voltage | +20 | V | | lD(+) | Drain Current (continuos) at Tc = 250C | 80 | A | | ID | Drain Current (continuos) at Tc = 1000C | 50 | A | | IDM(q) | Drain Current (pulsed) | 320 | A | | PTOT | Total Dissipation at Tc = 250C | 300 | W | | | Derating Factor | 2 | w/oC | | dv/dt(1) | Peak Diode Recovery voltage slope | 9 | V/ns | | EAS (2) | Single Pulse Avalanche Energy | 245 | mJ | | Tstg | Storage Temperature | -65 t0 175 | oC | | Tj | Max. Operating Junction Temperature | 1 75 | oC | | | | |
| Items | SymboIs | Test Conditions | Min | Typ | Max. | Units | | | | VGE=OV VCE=1200V Tj=250C | | | 1 0 | mA | | Zero Gate Voltage Collecter Current | CES | VGE=OV VCE=1200V Tj=1250C | | | | mA | | Gate-Emitter Leackage Current | IGES | VCE=OV VCE=+20V | | | 100 | nA | | Gate-Emitter Threshold Voltage | VGE{thJ | VCE=20V lc=8mA | 3.0 | | 6.0 | V | | Collecte r- E m itte r Saturatio n Voltage | VCE <sat) | VGE=15V lc=8A | | | 2.5 | V | | Input Capacitance | Cies | VGE=OV | | 1450 | | pF | | Output Capacitance | Coes | VcE=lOV | | | | | Reverse Transfer Capacitance | Cres | f=lMHz | | | | | | ton | Vcc=600V | | | | 0 8 | | | Turn-on Time | tr | lc=8A | Resitive load | | | 0.6 | | | toff | . VGE=+15V | | | | 1.5 | pl.s | | Turn-off Time | tf | RG=150fl | Inductive load | | | 1.0 | | Diode Forward On-Voltage | VF | IF=8A, VGE-OV | | | 2,5 | V | | Reverse Recovery Time | tr | IF=8A, -di/dt=50A/ys VGE=10V | | | 350 | ns | | | | | | | | |
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