| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| ERA6YHD180V | Panasonic | Original i | SMD | 09+ |
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| ERA6YHD180V | PANAS | 805 | 4280 |
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ERA6YHD180V Datasheet OVZ, the zener voltage temperature coefficient, is found from Figure 2. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Surge limitations are given in Figure 5. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be ex- tremely high in small spots, resulting in device degradation should the limits of Figure 5 be exceeded. ERA6YHD180V Price
ERA6YHD180V on stock Transmitters are available for operation over several dif- ferent temperature ranges from -40 0C to +85 0C. Man- ufactured in a 20-pin DIP, the transmitter consists of a hermetic, InGaAs laser and a single CMOS d river lC. The low-power consumption circuit provides modula- tion, automatic optical output power control, and data reference. The module can be driven by either ac- or dc-coupled data in single-ended or differential configu- ration. (See Recommended User Interfaces section for typical connection schemes.) The laser bias and back- facet monitor currents are electrically accessible for transmitter performance monitoring. The transmitter optical output may be disabled by a logic-level input.
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