ECEB2AU330 Datasheet| Features 3A, 200V, RDS(on) = 1.30l Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma . Meets Pre-Rad Specifications t0 100KRAD(Si) . Defined End Point Specs at 300KRAD(S1) and 1000KRAD(Si) . Performance Permits Limited Use t0 3000KRAD(Si) Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically . Survives 2E12 Typically If Current Limited to IDM Photo Current . 3.OnA Per-RAD(Si)/sec Typically Neutron . Pre-RAD Specifications for lE13 Neutrons/cm2 - Usable t0 1E14 Neutrons/cm2 Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A t0 60A, and on resistance as low as 2sml. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product t0 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates t0 1E9 without current limiting and 2E12 with cur- rent limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired deviations from the data sheet. | Package T0-205AF Symbol D G S | | Absolute Maximum Ratings (TC = +250C) Unless Otherwise Specified FRL9230D, R, H UNITS Drain-Source Voltage. . . . . . . . . . . . . . . . . .VDS -200 V Drain-Gate Voltage (RGS = 20kI ) ' ' ' ' ' ' . . . . . . . VDGR -200 V Continuous Drain Current Pulsed Drain Current . . . . . . . . . . . . . . . . . . IDM 9 A Gate-Source Voltage . . . . . . . . . . . . . . . . . .VGS +20 V Maximum Power Dissipation Derated Above +250C . . . . . . 0.20 W/oC Inductive Current, Clamped, L = 100ffH, (See Test Figure~ . . . . . . . . . ILM 9 A Continuous Source Current (Body Diode~ . . . . . . . . . . .IS 3 A Pulsed Source Current (Body Diode) . ' ' ' . . . . . . . . . ISM 9 A Operating And Storage Temperature. . . . . . . . TJC, TSTG -55 to +150 0C Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . TL 300 0C | | |
ECEB2AU330 Price Figure 8 illustrates the complete powerdown of the HMP9701A. Starting from normal operation, sequential writes to the Powerdown Register are performed to power- down one codec section at a time. After powering down the converters and the analog front end, a final write to PR4 is executed to shut down the HMP9701A's digital interface (AC-Iink). The part will remain in sleep mode with all its reg- isters holding their static values. ECEB2AU330 on stock| Parameters | 54MT.KB | 94MT.KB | 104MTKB | Units | | lo | 50 | 90 | 100 | A | | @Tc | 80 | 80 | 80 | oc | | IFSM @50Hz | 390 | 950 | 1130 | A | | @60Hz | 410 | 1000 | 1180 | A | | 12t @50Hz | 770 | 4525 | 6380 | A2S | | @60Hz | 700 | 4130 | 5830 | A2S | | 12 | 7700 | 45250 | 63800 | A2 | | VRRM range | 800 t0 1600 | V | | FSTG range | - 40 t0 125 | oc | | Tj range | - 40 t0 125 | oc | | | | | |
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