ADMap-584  > CXD8985AQ

suppliers of CXD8985AQ and PDF data of CXD8985AQ

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
CXD8985AQ SONY        123 
    STJ-TECH INTL CO.,LTD
  • Contact:Judy/George Ming
  • Tel:86-755-8268-6500/8268-6456
  • Fax:86-755-8268-6552
  • Email: sales01@stj-tech.com


CXD8985AQ SONY  QFP大  02+    60 


CXD8985AQ SONY    01+    350 
    E-Zone International (HK) Co.,..
  • Contact:Ella
  • Tel:86-755-8339-1755, 8326-7835
  • Fax:86-755-8339-1772
  • Email: sales1@ez-international.cn
CXD8985AQ SONY  01+  350     

CXD8985AQ Datasheet
Device Address (A2-AO) The Address inputs are used to set the least significant 3 bits of the 8-bit 2-wire interface slave address. A match in the slave address serial data stream must be made with the Address input pins in order to initiate communication with the X9455. A maximum of 8 devices may occupy the 2-wire serial bus. Chip Select (CS) When the CS pin is low, increment or decrement operations are possible using the SCL and U/D pins. The 2-wire interface is disabled at this time. When CS is high, the 2-wire interface is enabled. Up or Down Control (U/D) The U/D input pin is held HIGH during increment operations and held LOW during decrement operations.
CXD8985AQ Price
mobile phones. It can be used for both TDMA/AMPS or CDMA/AMPS systems. The MGCT04 is compatible with baseband and mixed signal interface circuits from Zarlink Semiconductor and other manufacturers.
CXD8985AQ on stock
For the synchronous MOSFET Q2, Rdscon; is an im- portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the con- trol lC so the gate drive losses become much more significant. Secondly, the output charge Qu;; and re- u oss verse recovery charge Qrr both generate losses that u rr are transfered to Ql and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs' susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions be- tween ground and V .As Ql turns on and off there is in a rate of change of drain voltage dV/dt which is ca- pacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgsl must be minimized to reduce the potential for Cdv/dt turn on.
Fairchild Semiconductor Europe Fax: +49 (0) 1 80-530 85 86 Email: europe support@nsc.com Deutsch Tel: +49 (0) 8 141-35- English Tel: +44 (0) 1 793-85-68-56 italy Tel: +39 (0) 2 57 5631

Forward-Current Transfer Ratio Ic = 0.1 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc Ic = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc hFE 50 75 100 100 30 325 300
Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc Ic = 500 mAdc, IB = 50 mAdc VCE(sai) 0.3 1.0 Vdc
Base-Emitter Saturation Voltage IC = 150 mAdc,IB = 15 mAdc Ic = 500 mAdc, IB = 50 mAdc VBE( sat) 0.6 1.2 2.0 Vdc