| Parameter | S\'mbol | Limits | Unit |
| Collector-base voltage | VCB | -8 | V |
| Collector-emitter voltage | VcE | -8 | V |
| Emitter-base voltage | VEB | -5 | V |
| Collector current | lc | -4 | A (DC) |
| -6 | A (Pulse) |
| Collector power dissipation | Pe | 30 | W (Tc= 25C) |
| Junction temperature | Tj | 150 | cc |
| Storage temperature | Tstq | -55+15 | cc |
| | | |
Dynamically Adju:;table Output from 0.3V t0 3.5V 600mA Output Current Internal 0.08Q P-Channel MOSFET Bypass Transistor High Efficiency: Up t0 96% 1.5MHz Constant Frequency Operation No Schottky Diode Required Low Dropout Operation: 100% Duty Cycle 2.5V t0 5V Input Voltage Range Shutdown Mode Draws <lyA Supply Current Current Mode Operation for Excellent Line and Load Transient Response Overtemperature Protected Available in 8-Lead 3mm x 3mm DFN Package
