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The BS616UV8011 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of l.8V t0 2.3V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low powerfeatures with a typical CMOS standby current of 0.6uA and maximum access time of 70/100ns in 2V operation. Easy memory expansion is provided by an active LOW chip enable(CEl) active HIGH chip enable (CE2), active LOW output enable(OE] and three-state output drivers. The BS616UV8011 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV8011 is available in 48-pin BGA package.