CL10C330JB8NNNB Price| Drain- source breakdown voltage VGS = 0 V, /D = 0.25 mA, Tj = 25 0C | V(BR)DSS | 1 00 | | | V | | Gate threshold voltage VGS= VDS, /D = 1 mA | VGS(th) | 2.1 | 3 | 4 | | Zero gate voltage drain current VDS = 100 V, VGS = 0 V, Tj = 25 0C VDS = 100 V, VGS = 0 V, Tj = 125 0C | /DSS | | 0.1 1 0 | 1 1 00 | UA | | Gate-source leakage current VGS = 20 V, VDS = OV | /GSS | | 1 0 | 1 00 | nA | | Drain-Source on-resistance VGS = 10 V, /D = 8.5 A | RDS(on) | | 0.17 | 0.2 | l | | | | | | |
CL10C330JB8NNNB on stock Long-term drift cannot be extrapolated from acceler- ated high temperature testing. This erroneous tech- nique gives drift numbers that are widely optimistic. The only way long-term drift can be determined is to mea- sure it over the time interval of interest. The LT1460S3 long-term drift data was taken on over100 parts that were soldered into PC boards similar to a "real world" applica- tion.The boardswere then placed intoa constanttempera- ture oven with TA = 30'fC, their outputs were scanned regularly and measured with an 8.5 digit DVM. Figure 5 shows typical long-term drift of the LT1460S3s. | SYMBOL | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT | | ICES ICES IEBO VCEOsust VCEsat VBEsat hFE | Collector cut-off current 1 Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain | VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 aC \/EB = 5 V; lC = 0 A lB = 0 A; lc = 100 mA; L = 25 mH lc = 0.1 A;IB = 10 mA lc = 0.2 A;IB = 20 mA lc = 1 mA; VCE = 5 V | 400 1 0 | | 0.1 1.0 1 0.8 1.0 32 | mA mA mA V V V | | | | | | | |
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