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Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memo- ries organized as 131,072 words of 8 bits each. Manufactured with Atmel's advanced nonvolatile CMOS technology, the devices offer access times t0 55 ns with power dis- sipation ofjust 90 mW over the commercial temperature range. When the devices are deselected, the CMOS standby current is less than 50.oA. To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not require high input voltages for programming. Three-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is performed by erasing the entire l megabit of memory and then programming on a byte by byte basis. The typical byte programming time is a fast 30 ~s. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
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