| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| AD707LQ | AD | 08+09+ | stock | 900 |
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| AD707LQ | DIP | AD |
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| AD707LQ | N/A | 2500 |
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| AD707LQ | AD | NEW,ORIGIN | DIP | IN STOCK |
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| AD707LQ | AD | DIP | IN STOCK | NEW,ORIGINAL | 500 |
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| AD707LQ | AD | DIP | 500 |
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| AD707LQ | AD | DIP | 04 |
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| AD707LQ | AD | N/A | N/A | n/a | 500 |
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| AD707LQ | AD | DIP |
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| AD707LQ | AD | 6500 |
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| AD707LQ | AD | DIP | 4 | new original parts | 551 |
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| AD707LQ | AD | 500 |
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| AD707LQ | AD | N/A | 9+ | New & original, stoc | 20000 |
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| AD707LQ | AD | DIP | 2002+ |
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| AD707LQ | AD | DIP | 05+ | 100% real stock | 500 |
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| AD707LQ | AD | DIP | N/A |
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| AD707LQ | AD | DIP | 500 |
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| AD707LQ | AD | 07+ | DIP |
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| AD707LQ | AD | DIP | 04 |
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| AD707LQ | AD | DIP | 2002+ |
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| AD707LQ | AD | DIP | 500 |
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| AD707LQ | AD | DIP | 500 |
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| AD707LQ | AD | DIP | 500 |
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| AD707LQ | AD | 500 |
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| AD707LQ |
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| AD707LQ | AD | 2002 | DIP |
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| AD707LQ | AD | DIP | 2002+ |
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| AD707LQ | AD | 04+ | 551 |
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| AD707LQ | AD | DIP | 500 |
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| AD707LQ | AD | DIP | 05+ | 自己库存,需要请联系 | 395 |
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| AD707LQ | AD | DIP |
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| AD707LQ | AD | DIP | 05+ | 500 |
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| AD707LQ | AD | Spot | DIP | 500 |
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| AD707LQ | AD | DIP | 500 |
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| AD707LQ | AD | DIP | 500 |
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| AD707LQ | AD | 500 |
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| AD707LQ | DIP | 500 | in stock | AD |
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| AD707LQ | AD | DIP | 03+ | 500 |
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| AD707LQ | AD | DIP | 02+ | 500 |
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| AD707LQ | AD | 500 |
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| AD707LQ | AD | DIP | 500 |
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| AD707LQ | AD | DIP | 00+05+ | 500 |
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| AD707LQ | 500 | AD | DIP |
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| AD707LQ | AD | DIP | 2002+ | 1000 |
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| AD707LQ | AD | 500 |
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| AD707LQ | N/A | 2500 |
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| AD707LQ | AD | 500 | DIP |
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AD707LQ Datasheet
AD707LQ Price a O w i O A N M o a Y v a a a a z i n o s O J l Z v a a a z n V W O N Description The AT49BV/LV002(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory. lts 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times t0 70 ns with power dissipation of just 90 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 50 pA. For the S11 MAG ANG 0.487 -77.7 0.346 -113.2 0.290 -134.4 0.275 -148.3 0.275 -158.7 0.280 -168.6 0.284 -176.9 0.291 177.1 0.302 172.6 0.324 167.8 0.346 162.2 0.358 155.4 0.364 150.7 0.369 147.6 0.389 144.8 0.408 142.0 0.427 137.5 0.445 134.0 0.455 131.1 0.470 128.3 |